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Polar TM Power MOSFET
HiPerFET TM
IXFK140N30P
IXFX140N30P
V DSS
I D25
R DS(on)
t rr
=
=
≤
≤
300V
140A
24m Ω
200ns
N-Channel Enhancement Mode
Avalanche Rated
Fast Intrisic Diode
TO-264 (IXFK)
Symbol
V DSS
V DGR
Test Conditions
T J = 25 ° C to 150 ° C
T J = 25 ° C to 150 ° C, R GS = 1M Ω
Maximum Ratings
300
300
V
V
G
D
S
(TAB)
V GSS
V GSM
I D25
I LRMS
Continuous
Transient
T C = 25 ° C
Lead Current Limit, RMS
± 20
± 30
140
75
V
V
A
A
PLUS247 (IXFX)
I DM
I A
E AS
T C = 25 ° C, pulse width limited by T JM
T C = 25 ° C
T C = 25 ° C
300
70
5
A
A
J
G = Gate
S = Source
D = Drain
TAB = Drain
(TAB)
dV/dt
I S ≤ I DM , V DD ≤ V DSS , T J ≤ 150 ° C
20
V/ns
P D
T C = 25 ° C
1040
W
Features
T J
T JM
T stg
T L
T SOLD
1.6mm (0.062 in.) from case for 10s
Plastic body for 10s
-55 ... +150
150
-55 ... +150
300
260
° C
° C
° C
° C
° C
?
?
?
?
Fast intrinsic diode
Avalanche Rated
Low R DS(ON) and Q G
Low package inductance
M d
Weight
Mounting force
Mounting torque
PLUS247
TO-264
(PLUS247)
(TO-264)
20..120/4.5..27
1.13/10
6
10
N/lb.
Nm/lb.in.
g
g
Advantages
Easy to mount
Space savings
High power density
Applications
? DC-DC coverters
Symbol Test Conditions
(T J = 25 ° C, unless otherwise specified)
Characteristic Values
Min. Typ. Max.
? Battery chargers
? Switched-mode and resonant-mode
BV DSS
V GS(th)
I GSS
I DSS
R DS(on)
V GS = 0V, I D = 3mA
V DS = V GS , I D = 8mA
V GS = ± 20V, V DS = 0V
V DS = V DSS
V GS = 0V
V GS = 10V, I D = 0.5 ? I D25 , Note 1
T J = 125 ° C
300
3.0
20
V
5.0 V
± 200 nA
25 μ A
1 mA
24 m Ω
power supplies
? DC choppers
? AC and DC motor control
? Uninterrupted power supplies
? High speed power switching
applications
? 2008 IXYS CORPORATION, All rights reserved
DS99557F(5/08)
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